Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs
IEEE Transactions on Electron Devices2019Vol. 66(9), pp. 3748–3755
Citations Over TimeTop 10% of 2019 papers
Abstract
In this paper, we study the self-heating mechanism and its impact on electrical performance of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal TCAD simulations. We propose an equivalent channel temperature to quantify the current degradation due to self-heating and also resolve the discrepancies between temperature measurements through electrical methods and thermal methods in the literature. We then explain the equivalent channel temperature's behavior using the temperature- and field-dependent electron transport theory for short gate length HEMTs. The implications and guidelines to the various aspects of device design are also discussed.
Related Papers
- → Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical models(2005)98 cited
- → Gallium nitride (GaN) HEMT's: progress and potential for commercial applications(2003)38 cited
- → Development of Periodically Oriented Gallium Nitride(2012)1 cited
- → Periodically Oriented Gallium Nitride: Materials Development(2014)
- → Advanced packaging for wide band gap power semiconductors(2017)