<title>Field-assisted photoemission from semiconductor heterostructures up to 1.7 um</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE1993Vol. 1982, pp. 122–126
Abstract
We present the spectral curves of the photoemission from biased semiconductor heterostructures with Schottky barrier InGaAs-InP-Ag in the region of spectrum up to 1.7 micrometers and consider the main processes that determine the efficiency of photoemission from such structures. We also present the characteristics of dark-current emission from InGaAs-InP- Ag heterostructures and show that it is connected with thermal generation of electrons in the space charge region of InGaAs near the interface.
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