Reactive Ion Etching of Silicon Nitride Deposited by Different Methods in CF 4 / H 2 Plasmas

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Abstract

Reactive ion etching in of silicon nitride deposited by either plasma‐enhanced chemical vapor deposition (PECVD) or low pressure chemical vapor deposition (LPCVD) has been studied. The steady‐state etch behavior of the two kinds of silicon nitride is very similar, e.g. the dependence of the nitride etch rate on the fraction in the gas mixture. However, in situ ellipsometry shows that silicon nitride formed by PECVD exhibits a much greater and longer initial etch transient (≈110 s) than LPCVD (≈20 s) if gas mixtures with a high proportion of are used. The strong etch rate transient seen for PECVD limits the ability to stop abruptly on this material relative to that of LPCVD .

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