Conditions for the Deposition of CdTe by Electrochemical Atomic Layer Epitaxy

Citations Over TimeTop 10% of 1991 papers

Abstract

The method of electrochemical atomic layer epitaxy (ECALE) is described. It involves the alternated electrochemical deposition of atomic layers of elements to form compound semiconductors. It is being investigated as a method for forming epitaxial thin films. Presently, it appears that the method is applicable to a wide range of compound semiconductors composed of a metal and one of the following main group elements: S, Se, Te, As, Sb, or Bi. Initial studies have involved deposition. Factors controlling deposit structure and composition are discussed here. Preliminary results which show that ordered electrodeposits of can be formed by the ECALE method are also presented. Results reported here were obtained with both a polycrystalline Au thin‐layer electrochemical cell and a single‐crystal Au electrode with faces oriented to the (111), (110), and (100) planes. The single‐crystal electrode was contained in a UHV surface analysis instrument with an integral electrochemical cell. Deposits were examined without their exposure to air using LEED and Auger electron spectroscopy. Coverages were determined using coulometry in the thin‐layer electrochemical cell.

Related Papers

• → Epitaxial growth of II–VI compound semiconductors by atomic layer epitaxy(1998)45 cited
• → A Novel Chemical Route to Atomic Layer Deposition of ZnS Thin Film from Diethylzinc and 1,5‐Pentanedithiol(2017)8 cited
• → Atomic layer epitaxy growth of ZnS Se1− epitaxial layers lattice-matched to Si substrates(2000)5 cited
• → Study of potential quantization effects in designs for 12.4 nm mirrors(2005)
• Analysis of MOCVD Epitaxy Growth Model by ALE(2004)