Degradation of Capacitance-Voltage Characteristics Induced by Self-Heating Effect in Poly-Si TFTs
Electrochemical and Solid-State Letters2006Vol. 9(6), pp. G208–G208
Citations Over TimeTop 14% of 2006 papers
Abstract
The degradation of poly-Si thin film transistors (TFTs) under self-heating stress was investigated via the capacitance between the source and the gate (), and that between the drain and the gate (). Consequently, the normalized and after stress positively shift for the gate voltage near flat band voltage. In addition, raises about 40% for the lower gate voltage, while raises only about 10%. With simulation results, it is found that the self-heating effect creates interface states near the source region and the deep states near drain, resulting in the different inclines of the of and curves.
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