The Influence of NH 4 F on the Etch Rates of Low Pressure Chemical Vapor Deposition Arsenosilicate Glasses in Buffered Oxide Etch
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Abstract
The dependence of the etch rates of low pressure chemical vapor deposition (LPCVD) arsenosilicate glass (AsSG) films with various dopant concentrations as a function of the composition of buffered and unbuffered hydrofluoric acid was examined. The composition of the buffered oxide etch (BOE) was varied from 0–30 weight percent (w/o) ammonium fluoride with 6 w/o hydrofluoric acid , and the concentration of from 3–10 w/o . In unbuffered hydrofluoric acid the etch rates increase linearly with the concentration. In BOE the etch rates run through a maximum. The AsSG films show principally the same etch behavior as undoped films described in a former paper. So we conclude that the same dissolution reaction occurs. A model for the reaction mechanism is proposed.
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