Point defects in Sc2O3 thin films by ion beam sputtering
Applied Optics2014Vol. 53(4), pp. A276–A276
Citations Over TimeTop 10% of 2014 papers
Peter Langston, E. Krous, Drew Schiltz, D. Patel, Luke A. Emmert, A.S. Markosyan, Brendan A. Reagan, Keith A. Wernsing, Yejia Xu, Zhanliang Sun, R. K. Route, M. M. Fejer, J. J. Rocca, Wolfgang Rudolph, Carmen S. Menoni
Abstract
We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxygen interstitials and the increase in stress and optical absorption in the films. Sc2O3 films with the lowest stress and optical absorption loss at 1 μm wavelength were obtained when using a low oxygen partial pressure and low beam voltage.
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