Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells
Optics Express2014Vol. 22(S3), pp. A857–A857
Citations Over TimeTop 10% of 2014 papers
Jaekyun Kim, Yong-Hee Cho, Dong‐Su Ko, Xiang‐Shu Li, Jung-Yeon Won, Eunha Lee, Seoung-Hwan Park, Jun-Youn Kim, Sung‐Jin Kim
Abstract
We discuss the influence of V-pits and their energy barrier, originating from its facets of (101¯1) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based on the self-consistent approach with adopting k⋅p method reveals that higher V-pit energy barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing the internal quantum efficiency (IQE).
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