A new active pixel structure with a pinned photodiode for wide dynamic range image sensors
IEICE Electronics Express2005Vol. 2(18), pp. 482–487
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Abstract
A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the conventional linear-log wide DR image sensor with pinned photo diode.
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