CI approach to spectra of quantum dots
Abstract
We present a systematic investigation of the electronic spectra of InAs / GaAs quantum dots using the configuration interaction (CI) approach. The approximations and numerical techniques used in modeling the system are described in detail. After solving for the lattice strain distribution, the one-particle energies of electron and hole levels in the quantum dot are calculated. The effects of electron-electron interactions in the confined geometry are studied using a CI approach analogous to that applied in quantum chemistry. The spectra of exciton and trion excitations are then obtained for a range of quantum dot sizes. The results from our approach are compared with those from a previous mean-field theoretical treatment and with experimental data.