0 citations
A 600 V SiC Trench JFET
Materials science forum2002Vol. 389-393, pp. 1219–1222
Related Papers
- → 690V, 1.00 mΩcm<sup>2</sup> 4H-SiC Double-Trench MOSFETs(2012)42 cited
- → Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)(2020)5 cited
- → Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET(2015)8 cited
- → Experimental research on temperature dynamics of SiC JFET(2012)1 cited
- Trench MOS-gated power devices(1994)