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Development and Demonstration of High-Power X-Band SiC MESFETs | doi.page

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Development and Demonstration of High-Power X-Band SiC MESFETs

Materials science forum·2002·Vol. 389-393, pp. 1367–1370

H.-R. Chang, Ehab Y. Hanna, J.B. Hacker, R. Hackett, Cong Dang Bui

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