Simulation and Optimization Characteristic of Novel MoS<sub>2</sub>/c-Si HIT Solar Cell

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Abstract

Monolayer MoS2 has excellent optoelectronic properties, which is a potential material for solar cell. Though MoS2/c-Si heterojunction solar cell has been researched by many groups, little study of MoS2/c-Si solar cell physics is reported. In this paper, MoS2/c-Si heterojunction solar cells have been designed and optimized by AFORS-HET simulation program. The various factors affecting the performance of the cells were studied in details using TCO/n-type MoS2/i-layer/p-type c-Si/BSF/Al structure. Due to the important role of intrinsic layer in HIT solar cell, the effect of different intrinsic layers including a-Si:H, nc-Si:H, a-SiGe:H, on the performance of TCO/n-type MoS2/i-layer/p-type c-Si/Al cell, was studied in this paper. The results show that the TCO/n-type MoS2/i-layer/p-type c-Si/Al cell has the highest efficiency with a-SiGe:H as intrinsic layer, efficiency up to 21.85%. The back surface field effects on the properties of solar cells were studied with p + μc-Si and Al as BSF layers. And the effect of various factors such as thickness and band gap of intrinsic layer, thickness of MoS2, density of defect state and the energy band offset of MoS2/c-Si interface of TCO/n-type MoS2/i-layer nc-Si:H/p-type c-Si/Al cells, on the characteristics of solar cells, have been discussed for this kind of MoS2 heterojunction cells. The optimal solar cell with structure of TCO/n-type MoS2/i-type nc-Si:H/p-type c-Si/BSF/Al, has the best efficiency of 27.22%.

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