S. I. Troshkov
Ioffe Institute(RU)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Photonic and Optical Devices, GaN-based semiconductor devices and materials, Semiconductor Lasers and Optical Devices, Photonic Crystals and Applications
Most-Cited Works
- → Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring(2012)52 cited
- → Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 13 μm(2017)46 cited
- → Continuous‐wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser(2015)36 cited
- → Room Temperature Lasing in 1-μm Microdisk Quantum Dot Lasers(2015)30 cited
- → Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling(2015)20 cited
- → Fast AlGaN growth in a whole composition range in planetary reactor(2012)19 cited
- → Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN(2015)19 cited
- → Control of emission spectra in quantum dot microdisk/microring lasers(2014)18 cited
- → Pulsed growth techniques in plasma-assisted molecular beam epitaxy of Al Ga1−N layers with medium Al content (x=0.4–0.6)(2015)16 cited
- → Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes(2021)16 cited