Mary Edmonds
Intel (United States)(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, Electronic and Structural Properties of Oxides, Silicon Nanostructures and Photoluminescence
Most-Cited Works
- → Atomic Layer Deposition of Al2O3on WSe2Functionalized by Titanyl Phthalocyanine(2016)102 cited
- → Atomic Imaging of the Irreversible Sensing Mechanism of NO2 Adsorption on Copper Phthalocyanine(2013)57 cited
- → Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions(2017)25 cited
- → Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)(2017)19 cited
- → The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces(2015)17 cited
- → Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3(2018)16 cited
- → Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer(2015)8 cited
- → Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum(2013)8 cited
- → InGaAs (110) Surface Cleaning Using Atomic Hydrogen(2014)4 cited
- → Passivation of surface defects on InGaAs (001) and (110) surfaces in preparation for subsequent gate oxide ALD(2015)3 cited