David F. Heidel
IBM (United States)(US)IBM Research - Thomas J. Watson Research Center(US)
Publications by Year
Research Areas
Radiation Effects in Electronics, Integrated Circuits and Semiconductor Failure Analysis, Semiconductor materials and devices, VLSI and Analog Circuit Testing, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells(2007)184 cited
- → Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM(2009)162 cited
- → An Overview of the BlueGene/L Supercomputer(2002)159 cited
- → Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM(2008)157 cited
- → Asynchronous interlocked pipelined CMOS circuits operating at 3.3-4.5 GHz(2002)69 cited
- → Experimental study of thermoelectricity in superconducting indium(1980)66 cited
- → 32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches(2011)59 cited