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C. T. Foxon

University of Nottingham(GB)

Publications by Year

Research Areas

GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, ZnO doping and properties, Semiconductor materials and devices, Quantum and electron transport phenomena

Most-Cited Works

→ Mn Interstitial Diffusion in(Ga,Mn)As(2004)485 cited
→ Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors(2005)410 cited
→ Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique(1975)396 cited
→ Interaction kinetics of As2 and Ga on {100} GaAs surfaces(1977)358 cited
→ The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique(1973)266 cited
→ Coulomb-Blockade Oscillations in the Thermopower of a Quantum Dot(1993)214 cited

→ Achieving high Curie temperature in (Ga,Mn)As(2008)

186 cited

→ Measurements of the effective mass and scattering times of composite fermions from magnetotransport analysis(1994)177 cited

→ Peltier coefficient and thermal conductance of a quantum point contact(1992)168 cited

→ Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurements(1974)158 cited