David F. Brown
BAE Systems (United States)(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, Radio Frequency Integrated Circuit Design, Semiconductor materials and devices, Semiconductor Quantum Structures and Devices
Most-Cited Works
- → Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications(2013)486 cited
- → Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz(2015)292 cited
- → Digestion of environmental materials for analysis by inductively coupled plasma-atomic emission spectrometry(1979)257 cited
- → N-polar GaN epitaxy and high electron mobility transistors(2013)225 cited
- → Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides(2014)217 cited
- → Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition(2007)185 cited