N. M. Johnson
Palo Alto Research Center(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, Silicon and Solar Cell Technologies, Thin-Film Transistor Technologies
Most-Cited Works
- → Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges(2017)1,463 cited
- → Advances in group III-nitride-based deep UV light-emitting diode technology(2010)668 cited
- → Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition(1996)491 cited
- → Activation energies of Si donors in GaN(1996)475 cited
- → Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon(1986)396 cited
- Hydrogen in semiconductors(1991)
- → Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off(1999)345 cited