Anne Lorenz
TU Dresden(DE)Technische Universität Dresden(DE)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Silicon and Solar Cell Technologies, Ga2O3 and related materials, Thin-Film Transistor Technologies
Most-Cited Works
- → Hybrid Inorganic-Organic Materials by Sol-Gel Processing of Organofunctional Metal Alkoxides(1995)882 cited
- → X-RAY And Gamma-Ray Standards For Detector Calibration(1996)118 cited
- → Fast Photoluminescence Imaging of Silicon Wafers(2006)83 cited
- → The Influence of Bi2O3 and Sb2O3 on the Electrical Properties of ZnO-Based Varistors(2001)61 cited
- → Approach for Al2O3 rear surface passivation of industrial p‐type Si PERC above 19%(2012)54 cited
- → AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4(2006)53 cited
- → On the blistering of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> as Si surface passivation(2011)51 cited
- → Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells(2012)44 cited
- → Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs(2009)35 cited
- → Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si<inf>3</inf>N<inf>4</inf>(2009)33 cited