V. N. Nevedomsky
Ioffe Institute(RU)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Advanced Semiconductor Detectors and Materials, Semiconductor Lasers and Optical Devices, Semiconductor materials and interfaces, GaN-based semiconductor devices and materials
Most-Cited Works
- → Formation of nanocrystalline BiFeO3 during heat treatment of hydroxides co-precipitated in an impinging-jets microreactor(2019)49 cited
- → Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology(2016)41 cited
- → Comparative Energy Modeling of Multiwalled Mg3Si2O5(OH)4 and Ni3Si2O5(OH)4 Nanoscroll Growth(2017)27 cited
- → Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers(2018)19 cited
- → Magnetic properties of synthetic Ni 3 Si 2 O 5 (OH) 4 nanotubes(2016)18 cited
- → Formation of conical (Mg,Ni)3Si2O5(OH)4 nanoscrolls(2015)18 cited
- → Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs(2009)16 cited
- → Pyrochlore Phase in the Bi2O3–Fe2O3–WO3–(H2O) System: its Formation by Hydrothermal-Microwave Synthesis and Optical Properties(2022)16 cited
- → Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN(2012)14 cited
- → Reconstruction of original indium distribution in InGaAs quantum wells from experimental SIMS depth profiles(2014)13 cited