J. Oila
Philips (Finland)(FI)
Publications by Year
Research Areas
Semiconductor materials and devices, GaN-based semiconductor devices and materials, Muon and positron interactions and applications, Ga2O3 and related materials, Graphene research and applications
Most-Cited Works
- → Vacancy Defects as Compensating Centers in Mg-Doped GaN(2003)135 cited
- → Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy(2003)126 cited
- → Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers(2001)115 cited
- → Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy(1998)103 cited
- → Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy(1998)96 cited
- → Observation of defect complexes containing Ga vacancies in GaAsN(2003)90 cited
- → Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy(2004)44 cited
- → Magnetic resonance imaging ( MRI )‐guided transurethral ultrasound therapy of the prostate: a preclinical study with radiological and pathological correlation using customised MRI ‐based moulds(2013)34 cited
- → Ga vacancies and grain boundaries in GaN(2003)27 cited
- → Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals(1999)26 cited