W. V. Lundin
Ioffe Institute(RU)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, ZnO doping and properties, Semiconductor materials and devices
Most-Cited Works
- → Composition dependence of optical phonon energies and Raman line broadening in hexagonalAlxGa1−xNalloys(2002)165 cited
- → Quantum dot origin of luminescence in InGaN-GaN structures(2002)109 cited
- → Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser(1999)81 cited
- → Effects of proton implantation on electrical and recombination properties of n-GaN(2000)69 cited
- → Hydrogen effects in III-nitride MOVPE(2008)49 cited
- → Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity(2004)48 cited
- → Point defects in gamma-irradiated n-GaN(2000)45 cited
- → Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study(2004)42 cited
- → Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure(2019)41 cited
- → X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy(2014)40 cited