Emmanouil Dimakis
Helmholtz-Zentrum Dresden-Rossendorf(DE)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Nanowire Synthesis and Applications, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, ZnO doping and properties
Most-Cited Works
- → Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates(2014)119 cited
- → Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)(2011)96 cited
- → Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy(2005)94 cited
- → Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth(2005)76 cited
- → Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays(2010)72 cited
- → High electron mobility in strained GaAs nanowires(2021)69 cited
- → Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy(2006)63 cited
- → Growth and properties of near‐UV light emitting diodes based on InN/GaN quantum wells(2008)61 cited
- → InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy(2006)53 cited
- → Shell-doping of GaAs nanowires with Si for n-type conductivity(2012)49 cited