Zhengyi Cao
Institute of Electronics(CN)
Publications by Year
Research Areas
Semiconductor materials and devices, Advanced Memory and Neural Computing, Graphene research and applications, Metal and Thin Film Mechanics, Diamond and Carbon-based Materials Research
Most-Cited Works
- → Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors(2015)616 cited
- → A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz(2018)132 cited
- → Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications(2015)130 cited
- → 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors(2016)111 cited
- → Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition(2017)96 cited
- → Diffusion barrier properties of amorphous and nanocrystalline Ta films for Cu interconnects(2009)47 cited
- → High-Temperature-Annealed Flexible Carbon Nanotube Network Transistors for High-Frequency Wearable Wireless Electronics(2020)30 cited
- → Achieving high strength and high electrical conductivity in Ag/Cu multilayers(2015)23 cited
- → High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz(2019)21 cited
- → In situ transmission electron microscopy observations of the crystallization of amorphous Ge films(2008)18 cited