T. Ernst
Institut polytechnique de Grenoble(FR)Commissariat à l'Énergie Atomique et aux Énergies Alternatives(FR)CEA Grenoble(FR)Laboratoire d'Électronique des Technologies de l'Information(FR)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Nanowire Synthesis and Applications, Integrated Circuits and Semiconductor Failure Analysis, Quantum Chromodynamics and Particle Interactions
Most-Cited Works
- → A measurement of the spin asymmetry and determination of the structure function g1 in deep inelastic muon-proton scattering(1988)1,562 cited
- → An investigation of the spin structure of the proton in deep inelastic scattering of polarised muons on polarised protons(1989)1,047 cited
- → Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm(2012)259 cited
- → Ultimately thin double-gate SOI MOSFETs(2003)244 cited
- → Measurement of the ratios of deep inelastic muon-nucleus cross sections on various nuclei compared to deuterium(1988)242 cited
- → Improved Split C–V Method for Effective Mobility Extraction in sub-0.1-<tex>$muhbox m$</tex>Si MOSFETs(2004)155 cited