A. Bourlange
University of Oxford(GB)
Publications by Year
Research Areas
ZnO doping and properties, Electronic and Structural Properties of Oxides, Gas Sensing Nanomaterials and Sensors, Molecular Junctions and Nanostructures, Semiconductor materials and devices
Most-Cited Works
- → Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy(2008)634 cited
- → Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3(2009)419 cited
- → Surface Electron Accumulation and the Charge Neutrality Level inIn2O3(2008)259 cited
- → Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy(2008)110 cited
- → X-ray spectroscopic study of the electronic structure ofCuCrO2(2009)98 cited
- → Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy(2008)48 cited
- → The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy(2009)41 cited
- → Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy(2008)30 cited
- → Interfacial Diffusion during Growth of SnO2(110) on TiO2(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy(2009)20 cited
- → Size-Dependent Shape and Tilt Transitions in In2O3 Nanoislands Grown on Cubic Y-Stabilized ZrO2(001) by Molecular Beam Epitaxy(2012)20 cited