G. P. Lansbergen
Taiwan Semiconductor Manufacturing Company (Taiwan)(TW)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Quantum and electron transport phenomena, GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET(2008)308 cited
- → Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire(2006)261 cited
- → A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems(2015)74 cited
- → Orbital Stark effect and quantum confinement transition of donors in silicon(2009)62 cited
- → Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor(2012)56 cited
- → Subthreshold channels at the edges of nanoscale triple-gate silicon transistors(2007)45 cited
- → Donor-Based Single Electron Pumps with Tunable Donor Binding Energy(2012)44 cited
- → CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications(2014)42 cited
- → Engineered valley-orbit splittings in quantum-confined nanostructures in silicon(2011)38 cited
- → Electric field reduced charging energies and two-electron bound excited states of single donors in silicon(2011)30 cited