Yoshio Okayama
Panasonic (Japan)(JP)Tohoku University(JP)Graduate School USA(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, Semiconductor materials and devices, ZnO doping and properties, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → Process integration of 3D chip stack with vertical interconnection(2004)84 cited
- → Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method(2019)36 cited
- → Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method(2020)26 cited
- → Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy(2021)12 cited
- → Application of High Reliable Silicon Thru-Via to Image Sensor CSP(2004)10 cited
- → Impact of parasitic resistance and silicon layer thickness scaling for strained-sificon MOSFETs on relaxed Si/sub 1-X/Ge/sub X/ virtual substrate(2005)9 cited