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Yu. Yu. Lebedinskiǐ | doi.page

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Yu. Yu. Lebedinskiǐ

National Academy of Sciences of Belarus(BY)Moscow Institute of Physics and Technology(RU)

Publications by Year

Research Areas

Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, Electronic and Structural Properties of Oxides, Integrated Circuits and Semiconductor Failure Analysis

Most-Cited Works

→ Ferroelectric Second-Order Memristor(2019)120 cited
→ Wake-Up in a Hf_0.5Zr_0.5O₂ Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching(2019)105 cited
→ Atomic-layer deposition of Lu2O3(2004)100 cited
→ Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions(2013)79 cited
→ Memristor with a ferroelectric HfO ₂ layer: in which case it is a ferroelectric tunnel junction(2020)64 cited
→ Effect of Polarization Reversal in Ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy(2017)61 cited

→ In Situ Control of Oxygen Vacancies in TaO_x Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications(2017)58 cited

→ Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation(1991)45 cited

→ Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring(2015)45 cited

→ Complementary and bipolar regimes of resistive switching in TiN/HfO₂/TiN stacks grown by atomic‐layer deposition(2015)40 cited