A. Vertiatchikh
General Electric (United States)(US)GE Global Research (United States)(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, Radio Frequency Integrated Circuit Design, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → Morpho butterfly wing scales demonstrate highly selective vapour response(2007)561 cited
- → Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors(2003)156 cited
- → Hot-phonon temperature and lifetime in a biasedAlxGa1−xN/GaNchannel estimated from noise analysis(2003)121 cited
- → Electron drift velocity in AlGaN/GaN channel at high electric fields(2003)115 cited
- → Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor(2002)92 cited
- → Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance(2003)77 cited
- → Effects ofγ-irradiation on AlGaN/GaN-based HEMTs(2003)58 cited
- → Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels(2003)56 cited
- → High-power monolithic AlGaN/GaN HEMT oscillator(2003)50 cited
- → High temperature Hall effect sensors based on AlGaN∕GaN heterojunctions(2006)47 cited