R. Öttking
Friedrich Schiller University Jena(DE)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Organic Electronics and Photovoltaics, Ga2O3 and related materials, Ferroelectric and Negative Capacitance Devices
Most-Cited Works
- → Temperature-Dependent Electronic and Vibrational Structure of the 1-Ethyl-3-methylimidazolium Bis(trifluoromethylsulfonyl)amide Room-Temperature Ionic Liquid Surface: A Study with XPS, UPS, MIES, and HREELS(2007)102 cited
- → Ab initio molecular dynamics simulation for structural transition of Zr during rapid quenching processes(2008)37 cited
- → A Comparative Study on the Electronic Structure of the 1-Ethyl-3-Methylimidazolium Bis(trifluoromethylsulfonyl)amide RT-Ionic Liquid by Electron Spectroscopy and First Principles Calculations(2006)36 cited
- → Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents(2015)26 cited
- → Single and Multiple Oxygen Vacancies in Ultrathin $ \hbox{SiO}_{2}$ Gate Dielectric and Their Influence on the Leakage Current: An Ab Initio Investigation(2010)26 cited
- → First Principle Calculation of the Leakage Current Through $\hbox{SiO}_{2}$ and $\hbox{SiO}_{x}\hbox{N}_{y}$ Gate Dielectrics in MOSFETs(2010)24 cited
- → Interaction of oxygen vacancies and lanthanum in Hf-based high-kdielectrics: anab initioinvestigation(2011)24 cited
- → Strong dispersion of the surface optical phonon of silicon carbide in the near vicinity of the surface Brillouin zone center(2006)17 cited
- → The Degradation Process of High-<inline-formula> <tex-math notation="TeX">$k~{\rm SiO}_{2}/{\rm HfO}_{2}$ </tex-math></inline-formula> Gate-Stacks: A Combined Experimental and First Principles Investigation(2014)16 cited
- → Surface phonons of clean and hydrogen terminated Si(1 1 0) surfaces(2005)12 cited