Samuel D. Hawkins
Sandia National Laboratories(US)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Advanced Semiconductor Detectors and Materials, Chalcogenide Semiconductor Thin Films, Topological Materials and Phenomena, Semiconductor Lasers and Optical Devices
Most-Cited Works
- → Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice(2012)211 cited
- → Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys(2013)84 cited
- → Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices(2014)72 cited
- → Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers(2016)57 cited
- → Mesa-isolated InGaAs photodetectors with low dark current(2009)57 cited
- → Analysis of III–V Superlattice nBn Device Characteristics(2016)55 cited
- → Intensity- and Temperature-Dependent Carrier Recombination inInAs/InAs1−xSbxType-II Superlattices(2015)53 cited
- → Comparison of nBn and nBp mid-wave barrier infrared photodetectors(2010)46 cited
- → Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM(2015)42 cited
- → Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices(2015)38 cited