Xuanwu Kang
Qingdao University(CN)Shanghai Business School(CN)China National Nuclear Corporation(CN)Shanghai Jiao Tong University(CN)Chinese Academy of Sciences(CN)Chinese Academy of Sciences(CN)Dalian University of Technology(CN)Affiliated Hospital of Qingdao University(CN)Institute of Microelectronics(CN)Shanghai Electric (China)(CN)Ministry of Education(ET)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, Semiconductor materials and devices, ZnO doping and properties, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon(2012)206 cited
- → Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2(2018)166 cited
- → A New Whole-Line Quick-Action Protection Principle for HVDC Transmission Lines Using One-End Current(2014)124 cited
- → Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices(2017)112 cited
- → High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure(2016)101 cited
- → AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility(2011)99 cited