E. Canato
STMicroelectronics (Czechia)(CZ)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies, Ga2O3 and related materials, Semiconductor Quantum Structures and Devices
Most-Cited Works
- → Reliability and failure analysis in power GaN-HEMTs: An overview(2017)107 cited
- → On the origin of the leakage current in p-gate AlGaN/GaN HEMTs(2018)57 cited
- → Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs(2019)55 cited
- → Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs(2021)46 cited
- → Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress(2019)46 cited
- → Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry(2017)32 cited
- → Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level(2017)30 cited
- → OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution(2020)29 cited
- → $\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate(2019)24 cited
- → Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment(2019)20 cited