David A. Deen
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Ga2O3 and related materials, Advancements in Semiconductor Devices and Circuit Design, ZnO doping and properties
Most-Cited Works
- → A Race-Track Trapped-Ion Quantum Processor(2023)292 cited
- → AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance(2008)174 cited
- → High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates(2013)57 cited
- → Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors(2011)49 cited
- → Graphene-Based Quantum Capacitance Wireless Vapor Sensors(2014)44 cited
- → Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures(2005)42 cited
- → Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures(2010)36 cited
- → Current focusing in InSb heterostructures(2006)33 cited
- → Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates(2014)33 cited
- → Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates(2013)32 cited