Franz P. G. Fengler
NaMLab (Germany)(DE)
Publications by Year
Research Areas
Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, Ferroelectric and Piezoelectric Materials, MXene and MAX Phase Materials
Most-Cited Works
- → Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors(2016)881 cited
- → Unveiling the double-well energy landscape in a ferroelectric layer(2019)402 cited
- → Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment(2017)375 cited
- → Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material(2018)344 cited
- → Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films(2016)236 cited
- → Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics(2017)139 cited
- → On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2(2018)108 cited
- → Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance(2017)108 cited
- → Negative Capacitance for Electrostatic Supercapacitors(2019)77 cited
- → Analysis of Performance Instabilities of Hafnia‐Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents(2018)72 cited