S. S. Su
Chinese Academy of Sciences(CN)Yunnan Observatories(CN)
Publications by Year
Research Areas
Particle physics theoretical and experimental studies, Quantum Chromodynamics and Particle Interactions, High-Energy Particle Collisions Research, Semiconductor materials and devices, GaN-based semiconductor devices and materials
Most-Cited Works
- → Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer(2019)67 cited
- → High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination(2021)59 cited
- → Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination(2021)58 cited
- → Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm2(2021)35 cited
- → Characterization and performance of dielectric diffusion barriers for Cu metallization(2004)30 cited
- → Dielectric/metal sidewall diffusion barrier for Cu/porous ultralow-k interconnect technology(2004)29 cited
- → Effect of Thermal Cleaning Prior to p-GaN Gate Regrowth for Normally Off High-Electron-Mobility Transistors(2019)27 cited
- → Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach(2020)26 cited
- → Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor(2021)21 cited
- → Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate(2020)18 cited