H. Protzmann
Aixtron (Germany)(DE)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, Ga2O3 and related materials, Acoustic Wave Resonator Technologies
Most-Cited Works
- → Effect of the AIN nucleation layer growth on AlN material quality(2008)79 cited
- → High‐temperature growth of AlN in a production scale 11 × 2′ MOVPE reactor(2008)50 cited
- → Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors(2006)45 cited
- → Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors(1993)24 cited
- → Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis(1999)23 cited
- → Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane(1998)21 cited
- → Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures(1991)20 cited
- → Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures(2002)18 cited
- → Synthesis of Gallane‐Amine adducts as potential precursors for GaAs and (AlGa)as MOVPE processes and the crystal structure of the {gallane · 1,3‐bis(dimethylamino)propane} adduct H3Ga · N(CH3)2(CH2)3N(CH3)2(1992)18 cited
- → Indium nanowires in thick (InGaN) layers as determined by x-ray analysis(2000)17 cited