Nobuyuki Sugii
Hitachi (Japan)(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and interfaces, Integrated Circuits and Semiconductor Failure Analysis, Electronic and Structural Properties of Oxides
Most-Cited Works
- → New High Temperature Superconducting Oxides. (La1−xSrx)2CuO4−δ and (La1−xCax)2CuO4−δ(1987)113 cited
- → Local $V_{\rm th}$ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation(2010)109 cited
- → Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX(2007)83 cited
- → Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor(1999)82 cited
- → Smallest V<inf>th</inf> variability achieved by intrinsic silicon on thin BOX (SOTB) CMOS with single metal gate(2008)73 cited
- → Solid-phase crystallization of Si1−xGex alloy layers(2001)71 cited