O. Pizzuto
STMicroelectronics (France)(FR)Ibs (France)(FR)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Advanced Data Storage Technologies, Integrated Circuits and Semiconductor Failure Analysis, Low-power high-performance VLSI design
Most-Cited Works
- → A new physical-based compact model of floating-gate EEPROM cells(2001)12 cited
- → A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories(2009)9 cited
- → A 0.18 μm flash source side erasing improvement(2005)4 cited
- → Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage(2007)2 cited
- → Modeling of a floating-gate EEPROM cell using a charge sheet approach(2002)1 cited
- A 0.18 /spl mu/m flash source side erasing improvement(2004)
- → Physical and Electrical Characterization of 120 nm Technology Node Devices using PULSION® Plasma Doping(2011)
- → Simulation of transient behavior of an EEPROM cell using a semi-quantum model for tunneling current(2002)