Tobias Gotschke
Paul Drude Institute for Solid State Electronics(DE)Forschungsverbund Berlin(DE)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Nanowire Synthesis and Applications, ZnO doping and properties, Ga2O3 and related materials, Semiconductor Quantum Structures and Devices
Most-Cited Works
- → Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy(2013)111 cited
- → Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity(2012)111 cited
- → Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer(2011)105 cited
- → Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film(2015)75 cited
- → Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays(2011)67 cited
- → Highly polarized Raman scattering anisotropy in single GaN nanowires(2010)39 cited
- → Origin of the nonradiative decay of bound excitons in GaN nanowires(2014)37 cited
- → Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering(2010)36 cited
- → Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy(2011)29 cited
- → Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires(2013)25 cited