P. Prystawko
Institute of High Pressure Physics(PL)Polish Academy of Sciences(PL)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, Ga2O3 and related materials, ZnO doping and properties
Most-Cited Works
- → AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources(2010)157 cited
- → GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates(2000)103 cited
- → Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals(2006)80 cited
- → Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN(2011)64 cited
- → AlGaN/GaN HEMT structures on ammono bulk GaN substrate(2014)64 cited
- → Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures(2002)53 cited
- → Electrically driven terahertz radiation of 2DEG plasmons in AlGaN/GaN structures at 110 K temperature(2017)