Jiang Lu
Northeastern University(CN)
Publications by Year
Research Areas
Silicon Carbide Semiconductor Technologies, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, HVDC Systems and Fault Protection, Electromagnetic Compatibility and Noise Suppression
Most-Cited Works
- → Deep levels created by low energy electron irradiation in 4H-SiC(2004)279 cited
- → Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)(2019)97 cited
- → Coupled free vibration of a functionally graded pre-twisted blade-shaft system reinforced with graphene nanoplatelets(2020)70 cited
- → Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs(2020)64 cited
- → A Novel 4H-SiC Trench MOSFET Integrated With Mesa-Sidewall SBD(2020)35 cited
- → Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C(2021)28 cited
- → Study on theoretical modeling and mechanical performance of a spinning porous graphene nanoplatelet reinforced beam attached with double blades(2022)22 cited
- → A novel 4H-SiC MOSFET for low switching loss and high-reliability applications(2020)19 cited
- → Bias Temperature Instability of 4H-SiC p- and n-Channel MOSFETs Induced by Negative Stress at 200 °C(2022)15 cited
- → Schottky Barrier Characteristic Analysis on 4H-SiC Schottky Barrier Diodes With Heavy Ion-Induced Degradation(2022)14 cited