Stanislav Tyaginov
IMEC(BE)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Silicon Carbide Semiconductor Technologies, Semiconductor materials and interfaces
Most-Cited Works
- → Predictive Hot-Carrier Modeling of n-Channel MOSFETs(2014)82 cited
- → Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs(2015)77 cited
- → Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation(2013)61 cited
- → Interface traps density-of-states as a vital component for hot-carrier degradation modeling(2010)57 cited
- → Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor(2005)57 cited
- → Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures(2020)56 cited
- → Modeling of hot-carrier degradation: Physics and controversial issues(2012)55 cited
- → Physical modeling of hot-carrier degradation for short- and long-channel MOSFETs(2014)49 cited
- → Physics-Based Hot-Carrier Degradation Modeling(2011)48 cited
- → Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces(2019)41 cited