Masashi Isemura
The University of Osaka(JP)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices
Most-Cited Works
- → Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnS(1988)77 cited
- → Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe(1987)72 cited
- → OMVPE of Zn-based II–IV semiconductors using methylmercaptan as a novel sulfur source(1988)45 cited
- → Residual impurities in epitaxial layers grown by MOVPE(1988)34 cited
- → Use of methylselenol for organometallic vapor-phase epitaxy of ZnSe(1988)31 cited
- → Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3(2011)15 cited
- → Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3(2014)15 cited
- → Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor(2016)13 cited
- → OMVPE growth of ZnSe and ZnSxSe1-x using methylselenol as a selenium source(1990)13 cited
- → Aluminum Metallization Using a Combination of Chemical Vapor Deposition and Sputtering(1997)13 cited