Karen Petrillo
IBM Research - Thomas J. Watson Research Center(US)
Publications by Year
Research Areas
Advancements in Photolithography Techniques, Integrated Circuits and Semiconductor Failure Analysis, Electron and X-Ray Spectroscopy Techniques, Semiconductor materials and devices, Advanced Surface Polishing Techniques
Most-Cited Works
- → Modeling line edge roughness effects in sub 100 nanometer gate length devices(2002)112 cited
- → Evaluation of EUV resist materials for use at the 32 nm half-pitch node(2008)107 cited
- → Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology(1991)107 cited
- → A high-performance 0.25- mu m CMOS technology. II. Technology(1992)102 cited
- → Environmentally stable chemical amplification positive resist: principle, chemistry, contamination resistance, and lithographic feasibility.(1994)96 cited
- → Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes(2004)86 cited