Aniruddha Konar
Intel (United States)(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Nanowire Synthesis and Applications, Quantum and electron transport phenomena, Graphene research and applications
Most-Cited Works
- → High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals(2012)1,612 cited
- → High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared(2012)1,109 cited
- → Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering(2007)445 cited
- → Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors(2010)297 cited
- → Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior(2012)280 cited
- → Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering(2008)250 cited
- → High-field transport in two-dimensional graphene(2011)113 cited
- → CMOS Logic Device and Circuit Performance of Si Gate All Around Nanowire MOSFET(2014)78 cited
- → Impact of geometrical parameters and substrate on analog/RF performance of stacked nanosheet field effect transistor(2019)59 cited
- → Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors(2012)58 cited