Fabiana Rampazzo
University of Padua(IT)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives(2008)635 cited
- → Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs(2004)321 cited
- → Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs(2006)183 cited
- → Reliability and failure analysis in power GaN-HEMTs: An overview(2017)107 cited
- → Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress(2006)84 cited
- → Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress(2013)54 cited
- → A review of failure modes and mechanisms of GaN-based HEMTs(2007)51 cited
- → Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs(2015)40 cited
- → Degradation mechanisms of GaN-based LEDs after accelerated DC current aging(2003)40 cited
- → Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability(2023)35 cited