Junichi Takino
Panasonic (Japan)(JP)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, Semiconductor materials and devices, Semiconductor Quantum Structures and Devices
Most-Cited Works
- → Development of a 2-inch GaN wafer by using the oxide vapor phase epitaxy method(2019)36 cited
- → Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method(2020)26 cited
- → Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy(2021)12 cited
- → Effect of methane additive on GaN growth using the OVPE method(2019)9 cited
- → Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation(2021)9 cited
- → Effect of additional N2O gas on the suppression of polycrystal formation and high-rate GaN crystal growth by OVPE method(2021)4 cited
- → Influence of oxygen-related defects on the electronic structure of GaN(2022)4 cited
- → Origin of Black Color in Heavily Doped n‐Type GaN Crystal(2024)2 cited
- → Effects of adding methane on the growth and electrical properties of GaN in oxide vapor phase epitaxy(2024)2 cited
- → Thermodynamic analysis of oxide vapor phase epitaxy of GaN(2023)2 cited